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Transistor MOS-P-Ch 100V 35A 150W <60mom(21A)

Product Code: IRF5210
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AmountPrice with tax (pcs)
1+
-49%
€2.15€4.25
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Min. qty: 1

Unit: pcs

Total:

€2.15

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Product description

INFINEON
MOS-P-Ch 100V 35A 150W <60mom(21A)

Useful information


Specifications

SKU
64570
Weight
0.001 kg.
Power, W
150
Current, A
35
Structure
MOS-P-Ch
Product code
IRF5210
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

The INFINEON Transistor MOS-P-Ch 100V 35A 150W <60mom(21A) is a P-Channel MOSFET, unipolar, with a -100V voltage rating and a -40A current rating. It is a powerful and reliable device that can be used in a wide variety of applications.

This MOSFET is designed for use in applications where high power dissipation is required. It features a low on-resistance, which allows for efficient power transfer. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Here are some of the key features of this product:

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated

If you are looking for a high-performance MOSFET that can handle high power levels, then the INFINEON Transistor MOS-P-Ch 100V 35A 150W <60mom(21A) is a great option.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB

Useful information

Supplier parameters

Case
TO220AB
Drain current
-40A
Drain-source voltage
-100V
Gate charge
0.12µC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
60mΩ
Polarisation
unipolar
Power dissipation
200W
Technology
HEXFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .