Transistor MOS-N-Ch 55V 84A 170W <11mR(43A)
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Experimental product description generated by artificial intelligence
INFINEON Transistor MOS-N-Ch 55V 84A 170W <11mR(43A)
This high-power N-channel MOSFET from INFINEON is part of the HEXFET family, known for its advanced process technology and efficiency. It's ideal for applications demanding high current and voltage handling capabilities.
Key Features
- 55V Drain-to-Source Breakdown Voltage
- 84A Continuous Drain Current
- 170W Power Dissipation
- Low On-Resistance: <11mR(43A)
- Fast Switching
- Fully Avalanche Rated
- 175°C Operating Temperature
Applications
This versatile MOSFET is suitable for a wide range of power applications, including:
- Power supplies
- Motor drives
- Industrial control systems
- High-power switching circuits
Why Choose This Product?
The INFINEON Transistor MOS-N-Ch 55V 84A 170W <11mR(43A) offers a compelling combination of high performance and reliability. Its robust design, advanced features, and proven HEXFET technology make it a superior choice for demanding applications. The low on-resistance ensures high efficiency, while the high current and voltage ratings provide ample headroom for various power applications.
| Parameter | Value |
|---|---|
| Drain-to-Source Breakdown Voltage (VDSS) | 55V |
| Continuous Drain Current (ID) | 84A |
| Power Dissipation (PD) | 170W |
| On-Resistance (RDS(on)) | <11mR (43A) |
This product is packaged in a TO-220AB package.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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