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Transistor MOS-P-Ch 100V 12A 88W <0E3 TO220

Product Code: IRF9530
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€1.99€1.99
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€1.79
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€1.99

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Product description

INFINEON
MOS-P-Ch 100V 12A 88W <0E3 TO220

Useful information


Specifications

SKU
24845
Weight
0.005 kg.
Power, W
88
Housing
TO220
Current, A
12
Structure
MOS-P-Ch
Product code
IRF9530
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

INFINEON Transistor MOS-P-Ch 100V 12A 88W <0E3 TO220

INFINEON Transistor MOS-P-Ch 100V 12A 88W <0E3 TO220

This INFINEON P-Channel MOSFET transistor is a high-power semiconductor device ideal for various applications requiring fast switching and high current handling capabilities.

Key Features

  • Technology: HEXFET Power MOSFET
  • Type: P-Channel
  • Voltage Rating: 100V
  • Current Rating: 12A
  • Power Dissipation: 88W
  • Package: TO-220AB

Applications

This versatile MOSFET is suitable for a wide range of applications, including:

  • Power supplies
  • Motor control
  • Industrial automation
  • Switching circuits

Why Choose This Product?

The INFINEON Transistor MOS-P-Ch 100V 12A 88W <0E3 TO220 offers a compelling combination of performance and reliability. Its high voltage and current ratings, combined with fast switching speed, make it an excellent choice for demanding applications. The TO-220 package ensures efficient heat dissipation, contributing to its robust performance and longevity.

ParameterValue
Voltage Rating100V
Current Rating12A
Power Dissipation88W
PackageTO-220AB

Note: Specific details beyond those listed may vary. Please refer to the datasheet for complete specifications.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iÅ¡ doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].

Supplier product description

Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB

Useful information

Supplier parameters

Case
TO220AB
Drain current
-14A
Drain-source voltage
-100V
Gate charge
38.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
0.2Ω
Polarisation
unipolar
Power dissipation
79W
Technology
HEXFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .