Transistor MOS-N-Ch 55V 80A 200W <8mR(59A)
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Product description
MOS-N-Ch 55V 80A 200W <8mR(59A) TO220AB
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Experimental product description generated by artificial intelligence
INFINEON Transistor MOS-N-Ch 55V 80A 200W <8mR(59A)
This INFINEON MOSFET transistor, also known as a power MOSFET or HEXFET, is a high-performance semiconductor device designed for demanding applications requiring high current and voltage handling capabilities.
Key Features
- N-Channel Enhancement Mode: The transistor conducts current when a positive voltage is applied to the gate.
- High Voltage Rating (55V): Capable of withstanding high voltage levels.
- High Current Capacity (80A): Designed to handle significant current flow.
- High Power Dissipation (200W): Can operate at high power levels.
- Low On-Resistance (<8mR @ 59A): Minimizes power loss during operation.
Applications
This versatile MOSFET is suitable for a wide range of applications, including:
- Power supplies
- Motor control
- Industrial automation
- Power switching circuits
Why Choose This Product?
The INFINEON Transistor MOS-N-Ch 55V 80A 200W <8mR(59A) offers a compelling combination of performance and reliability. Its high voltage and current ratings, coupled with low on-resistance, make it an ideal choice for applications demanding high efficiency and robust operation. The INFINEON brand is synonymous with quality and innovation in power semiconductor technology.
| Parameter | Value |
|---|---|
| Voltage Rating | 55V |
| Current Rating | 80A |
| Power Rating | 200W |
| On-Resistance | <8mR (59A) |
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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