Transistor MOS-P-Ch 200V 11A 125W 0R5
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Experimental product description generated by artificial intelligence
VISHAY Transistor MOS-P-Ch 200V 11A 125W 0R5
This MOSFET from Vishay is a high-power, P-channel transistor ideal for various applications requiring fast switching and high current handling. It's part of Vishay's third-generation Power MOSFETs, known for their combination of speed, ruggedness, low resistance, and cost-effectiveness.
Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- P-Channel configuration
- Fast Switching capabilities
- Ease of Paralleling for increased current capacity
- Simple Drive Requirements
- RoHS compliant
Applications
This versatile transistor is suitable for a wide range of power switching applications in commercial and industrial settings where high power dissipation is needed. The TO-220AB package makes it suitable for applications up to approximately 50W.
Why Choose This Product?
Vishay's third-generation Power MOSFETs offer a superior combination of performance characteristics. The low thermal resistance and cost-effective TO-220AB package contribute to its widespread use. This specific model provides a balance of high voltage, current handling, and power dissipation capabilities, making it a reliable choice for demanding applications.
Main Parameters
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 200V |
| Drain Current (ID) | 11A |
| Power Dissipation (PD) | 125W |
| On-Resistance (RDS(on)) | 0.5Ω |
Note: Always refer to the full datasheet for complete specifications and safety information before using this component in your design.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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