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IGBT, 650V, 80A, 238W, TO-263

Product Code: AFGB40T65SQDN
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Price range

AmountPrice with tax (pcs)
1-9
€7.51€7.51
10-99
€5.78
100-499
€4.81
500-999
€3.66
1000+
€4.48
wholesale

Min. qty: 1

Multiplier: 1

Total:

€7.51
2024-11-19 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Warehouse in Europe

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Product description

IGBT, 650V, 80A, 238W, TO-263

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Specifications

SKU
U-1488902
Product code
AFGB40T65SQDN

Supplier product description

IGBT, 650V, 80A, 238W, TO-263; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3P

Useful information

Supplier parameters

Product code
AFGB40T65SQDN
Brand
ON SEMICONDUCTOR
Supplier's product code
2981065
Product ID
U-1488902
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .