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Specifications
Supplier product description
IGBT, 650V, 80A, 238W, TO-263; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3P
Useful information
Supplier parameters
Product code
AFGB40T65SQDN
Brand
ON SEMICONDUCTOR
Supplier's product code
2981065
Product ID
U-1488902
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