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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A VISHAY

Product Code: SI4435FDY-T1-GE3
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Price range

AmountPrice with tax (pcs)
1-9
€0.66€0.66
10-49
€0.54
50-99
€0.38
100-499
€0.33
500+
€0.29
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.66
2024-11-21 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A VISHAY

Useful information


Specifications

SKU
U-2961382
Brand
Product code
SI4435FDY-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A

Useful information

Supplier parameters

Product code
SI4435FDY-T1-GE3
Brand
VISHAY
Supplier's product code
SI4435FDY-T1-GE3
Product ID
U-2961382
Case
SO8
Drain current
-12.6A
Drain-source voltage
-30V
Gate charge
28nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
4.8W
Pulsed drain current
-32A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
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