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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A VISHAY

Product Code: SISS27DN-T1-GE3
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Price range

AmountPrice with tax (pcs)
1-49
€1.11
50-99
€0.81
100-499
€0.70
500-999
€0.50
1000+
€0.46
wholesale

Min. qty: 1

Multiplier: 1

Total:

€1.11
2024-10-03 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A VISHAY

Specifications

SKU
U-3046221
Brand
Product code
SISS27DN-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -200A

Supplier parameters

Product code
SISS27DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISS27DN-T1-GE3
Product ID
U-3046221
Case
PowerPAK® 1212-8
Drain current
-50A
Drain-source voltage
-30V
Gate charge
0.14µC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
9mΩ
Polarisation
unipolar
Power dissipation
36W
Pulsed drain current
-200A
Technology
TrenchFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .