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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A VISHAY

Product Code: SI3459BDV-T1-GE3
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Brand

Price range

AmountPrice with tax (pcs)
1-49
€1.15€1.15
50-99
€0.82
100-499
€0.70
500-1499
€0.50
1500+
€0.44
wholesale

Min. qty: 1

Multiplier: 1

Total:

€1.15
2024-10-29 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A VISHAY

Specifications

SKU
U-3134444
Brand
Product code
SI3459BDV-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A

Supplier parameters

Supplier's product code
SI3459BDV-T1-GE3
Product ID
U-3134444
Case
TSOP6
Drain current
-2.9A
Drain-source voltage
-60V
Gate charge
12nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
288mΩ
Polarisation
unipolar
Power dissipation
3.3W
Pulsed drain current
-8A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
Product code
SI3459BDV-T1-GE3
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .