Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 ONSEMI
Product Code: FDN352AP
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Product description
Brand
Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 ONSEMI
Useful information
Specifications
Supplier product description
Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Useful information
Supplier parameters
Product code
FDN352AP
Brand
ON SEMICONDUCTOR
Supplier's product code
FDN352AP
Product ID
U-187010
#Promotion
aac_202202
Case
SuperSOT-3
Drain current
-1.3A
Drain-source voltage
-30V
Features of semiconductor devices
logic level
Gate charge
1.9nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
0.4Ω
Polarisation
unipolar
Power dissipation
0.5W
Technology
PowerTrench®
Type of transistor
P-MOSFET
Unit price
No
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