Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Product Code: PMZ350UPEYL
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Product description
Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Useful information
Specifications
SKU
U-292367
Product code
PMZ350UPEYL
Supplier product description
Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Useful information
Supplier parameters
Product code
PMZ350UPEYL
Case
DFN1006-3
Drain current
-700mA
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
1.9nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
645mΩ
Polarisation
unipolar
Pulsed drain current
-2.8A
Technology
Trench
Type of transistor
P-MOSFET
Supplier's product code
PMZ350UPEYL
Product ID
U-292367
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