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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A VISHAY

Product Code: SQ3427AEEV-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A VISHAY

Specifications

SKU
U-3822852
Brand
Product code
SQ3427AEEV-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A

Supplier parameters

Product code
SQ3427AEEV-T1-GE3
Product ID
U-3822852
Application
automotive industry
Case
TSOP6
Drain current
-5.3A
Drain-source voltage
-60V
Features of semiconductor devices
ESD protected gate
Gate charge
22nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
178mΩ
Polarisation
unipolar
Power dissipation
1.6W
Pulsed drain current
-21A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SQ3427AEEV-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .