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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A VISHAY

Product Code: SI2319DS-T1-E3
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Price range

AmountPrice with tax (pcs)
1-4
€1.51
5-24
€0.89
25-99
€0.80
100-499
€0.70
500+
€0.63
wholesale

Min. qty: 1

Multiplier: 1

Total:

€1.51
2024-10-08 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A VISHAY

Useful information


Specifications

SKU
U-1907832
Brand
Product code
SI2319DS-T1-E3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A

Useful information

Supplier parameters

Product code
SI2319DS-T1-E3
Case
SOT23
Drain current
-2.4A
Drain-source voltage
-40V
Gate charge
17nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.13Ω
Polarisation
unipolar
Power dissipation
0.8W
Pulsed drain current
-12A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI2319DS-T1-E3
Product ID
U-1907832
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .