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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A VISHAY

Product Code: SI2393DS-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A VISHAY

Specifications

SKU
U-3822836
Brand
Product code
SI2393DS-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A

Supplier parameters

Product code
SI2393DS-T1-GE3
Case
SOT23
Drain current
-7.5A
Drain-source voltage
-30V
Gate charge
25.2nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
33mΩ
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
-50A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI2393DS-T1-GE3
Product ID
U-3822836
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .