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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A VISHAY

Product Code: SI4825DDY-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A VISHAY

Specifications

SKU
U-3733670
Brand
Product code
SI4825DDY-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A

Supplier parameters

Product code
SI4825DDY-T1-GE3
Product ID
U-3733670
Case
SO8
Drain current
-14.9A
Drain-source voltage
-30V
Gate charge
86nC
Gate-source voltage
±25V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
20.5mΩ
Polarisation
unipolar
Power dissipation
5W
Pulsed drain current
-60A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
Brand
VISHAY
Supplier's product code
SI4825DDY-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .