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Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A VISHAY

Product Code: SI2333CDS-T1-E3
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Price range

AmountPrice with tax (pcs)
1-9
€0.98
10-24
€0.87
25-99
€0.70
100-249
€0.59
250+
€0.50
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.98
2024-10-14 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A VISHAY

Specifications

SKU
U-3822830
Brand
Product code
SI2333CDS-T1-E3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A

Supplier parameters

Case
SOT23
Drain current
-7.1A
Drain-source voltage
-12V
Gate charge
25nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
59mΩ
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
-20A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Product code
SI2333CDS-T1-E3
Brand
VISHAY
Supplier's product code
SI2333CDS-T1-E3
Product ID
U-3822830
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .