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Product description
Specifications
Experimental product description generated by artificial intelligence
NPN Transistor: NXP SOT89
This NXP Transistor, a type of bipolar transistor, is a high-performance component ideal for a variety of applications. Specifically, this is the 100V 1A 1.3W 130MHz SOT89 NPN transistor.
Key Features and Specifications
- Manufacturer: NXP
- Type: NPN Bipolar Transistor
- Collector-Emitter Voltage (Vceo): 100V
- Collector Current (Ic): 1A
- Power Dissipation: 1.3W
- Transition Frequency (fT): 130MHz
- Package: SOT89
Applications
This versatile transistor is suitable for numerous applications including, but not limited to:
- Switching circuits
- Amplifier circuits
- General purpose applications
Why Choose This NXP Transistor?
This NXP SOT89 transistor offers a robust combination of high voltage, current handling capability, and switching speed. Its compact SOT89 package makes it suitable for space-constrained designs. The reliability associated with the NXP brand ensures consistent performance.
Technical Details
Parameter | Value |
---|---|
Maximum Collector-Emitter Voltage | 100V |
Maximum Collector Current | 1A |
Maximum Power Dissipation | 1.3W |
Transition Frequency | 130MHz |
For detailed specifications, please refer to the NXP datasheet.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
- Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
- Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
- Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
- Name or Model Discrepancies: AI may misrepresent the product name or model.
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