Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6 ONSEMI
Product Code: NTGD1100LT1G
Brand
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Product description
Brand
Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6 ONSEMI
Specifications
Supplier product description
Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Supplier parameters
Product code
NTGD1100LT1G
Supplier's product code
NTGD1100LT1G
Product ID
U-2430318
#Promotion
aac_202202
Case
TSOP6
Drain current
2.4A
Drain-source voltage
8V
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
40mΩ
Polarisation
unipolar
Power dissipation
0.43W
Pulsed drain current
10A
Type of transistor
N/P-MOSFET
Unit price
No
Brand
ON SEMICONDUCTOR
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