Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Product Code: DMN3190LDW-7
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Product description
Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Useful information
Specifications
SKU
U-166343
Product code
DMN3190LDW-7
Supplier product description
Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Useful information
Supplier parameters
Product code
DMN3190LDW-7
Case
SOT363
Drain current
0.9A
Drain-source voltage
30V
Features of semiconductor devices
ESD protected gate
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.19Ω
Polarisation
unipolar
Power dissipation
0.32W
Pulsed drain current
9.6A
Type of transistor
N-MOSFET x2
Supplier's product code
DMN3190LDW-7
Product ID
U-166343
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