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Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A VISHAY

Product Code: SUP90100E-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A VISHAY

Specifications

SKU
U-3116659
Brand
Product code
SUP90100E-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A

Supplier parameters

Product code
SUP90100E-GE3
Supplier's product code
SUP90100E-GE3
Product ID
U-3116659
Case
TO220AB
Drain current
150A
Drain-source voltage
200V
Gate charge
110nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
12.4mΩ
Polarisation
unipolar
Power dissipation
375W
Pulsed drain current
250A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
Brand
VISHAY
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