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Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A VISHAY

Product Code: SUD20N10-66L-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A VISHAY

Specifications

SKU
U-3116607
Brand
Product code
SUD20N10-66L-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A

Supplier parameters

Product code
SUD20N10-66L-GE3
Brand
VISHAY
Supplier's product code
SUD20N10-66L-GE3
Product ID
U-3116607
Case
TO252
Drain current
16.9A
Drain-source voltage
100V
Gate charge
30nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
41.7W
Pulsed drain current
25A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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