Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 156.4A; Idm: 300A VISHAY
Product Code: SISS08DN-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 156.4A; Idm: 300A
Supplier parameters
Case
PowerPAK® 1212-8
Drain current
156.4A
Drain-source voltage
25V
Gate charge
82nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.87mΩ
Polarisation
unipolar
Power dissipation
42W
Pulsed drain current
300A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
Product code
SISS08DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISS08DN-T1-GE3
Product ID
U-3046212
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