Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W VISHAY
Product Code: SISH536DN-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Supplier parameters
Product code
SISH536DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISH536DN-T1-GE3
Product ID
U-3046203
Case
PowerPAK® 1212-8
Drain current
54A
Drain-source voltage
30V
Gate charge
25nC
Gate-source voltage
-12...16V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4.6mΩ
Polarisation
unipolar
Power dissipation
17W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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