Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A VISHAY
Product Code: SISF20DN-T1-GE3
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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Supplier parameters
Product code
SISF20DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISF20DN-T1-GE3
Product ID
U-3046190
Case
PowerPAK® 1212-8
Drain current
41A
Drain-source voltage
60V
Gate charge
33nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
18.5mΩ
Polarisation
unipolar
Power dissipation
44.4W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
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