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Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 18A VISHAY

Product Code: SIS780DN-T1-GE3
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Product description

Brand
Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 18A VISHAY

Specifications

SKU
U-3047470
Brand
Product code
SIS780DN-T1-GE3

Supplier product description

Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 18A

Supplier parameters

Product code
SIS780DN-T1-GE3
Case
PowerPAK® 1212-8
Drain current
18A
Drain-source voltage
30V
Gate charge
24.5nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
17.5mΩ
Polarisation
unipolar
Power dissipation
17.7W
Pulsed drain current
50A
Technology
TrenchFET®
Type of transistor
N-MOSFET + Schottky
Unit price
No
Brand
VISHAY
Supplier's product code
SIS780DN-T1-GE3
Product ID
U-3047470
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .