Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 11.4A; Idm: 20A VISHAY
Product Code: SIS110DN-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 11.4A; Idm: 20A
Supplier parameters
Product code
SIS110DN-T1-GE3
Brand
VISHAY
Supplier's product code
SIS110DN-T1-GE3
Product ID
U-3046140
Case
PowerPAK® 1212-8
Drain current
11.4A
Drain-source voltage
100V
Gate charge
13nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
70mΩ
Polarisation
unipolar
Power dissipation
15W
Pulsed drain current
20A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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