Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A VISHAY
Product Code: SIRC10DP-T1-GE3
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Supplier product description
Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A
Supplier parameters
Product code
SIRC10DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRC10DP-T1-GE3
Product ID
U-3046134
Case
PowerPAK® SO8
Drain current
60A
Drain-source voltage
30V
Gate charge
36nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
5.2mΩ
Polarisation
unipolar
Power dissipation
27.5W
Pulsed drain current
150A
Technology
TrenchFET®
Type of transistor
N-MOSFET + Schottky
Unit price
No
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