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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Supplier parameters
Product code
SIRB40DP-T1-GE3
Case
PowerPAK® SO8
Drain current
40A
Drain-source voltage
40V
Gate charge
93nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4.2mΩ
Polarisation
unipolar
Power dissipation
29.6W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Brand
VISHAY
Supplier's product code
SIRB40DP-T1-GE3
Product ID
U-3046132
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