Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 268A; Idm: 350A VISHAY
Product Code: SIRA20BDP-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 268A; Idm: 350A
Supplier parameters
Product code
SIRA20BDP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRA20BDP-T1-GE3
Product ID
U-3046109
Case
PowerPAK® SO8
Drain current
268A
Drain-source voltage
25V
Gate charge
186nC
Gate-source voltage
-12...16V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
820µΩ
Polarisation
unipolar
Power dissipation
67W
Pulsed drain current
350A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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