Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 116A; Idm: 300A VISHAY
Product Code: SIR582DP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 116A; Idm: 300A
Supplier parameters
Product code
SIR582DP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR582DP-T1-RE3
Product ID
U-3116473
Case
PowerPAK® SO8
Drain current
116A
Drain-source voltage
80V
Gate charge
67nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
3.9mΩ
Polarisation
unipolar
Power dissipation
92.5W
Pulsed drain current
300A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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