Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A VISHAY
Product Code: SIR570DP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Supplier parameters
Product code
SIR570DP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR570DP-T1-RE3
Product ID
U-3116466
Case
PowerPAK® SO8
Drain current
77.4A
Drain-source voltage
150V
Gate charge
71nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
8.5mΩ
Polarisation
unipolar
Power dissipation
104W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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