Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC VISHAY
Product Code: SIHG80N60EF-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Supplier parameters
Product code
SIHG80N60EF-GE3
Brand
VISHAY
Supplier's product code
SIHG80N60EF-GE3
Product ID
U-3045993
Case
TO247AC
Drain current
51A
Drain-source voltage
600V
Gate charge
400nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
32mΩ
Polarisation
unipolar
Power dissipation
520W
Pulsed drain current
254A
Type of transistor
N-MOSFET
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