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Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 89A; 390W; TO247AC VISHAY

Product Code: SIHG32N50D-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 89A; 390W; TO247AC VISHAY

Specifications

SKU
U-3045979
Brand
Product code
SIHG32N50D-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 89A; 390W; TO247AC

Supplier parameters

Product code
SIHG32N50D-GE3
Brand
VISHAY
Supplier's product code
SIHG32N50D-GE3
Product ID
U-3045979
Case
TO247AC
Drain current
19A
Drain-source voltage
500V
Gate charge
96nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
0.15Ω
Polarisation
unipolar
Power dissipation
390W
Pulsed drain current
89A
Type of transistor
N-MOSFET
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