Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W VISHAY
Product Code: SIHFBE30L-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Supplier parameters
Product code
SIHFBE30L-GE3
Brand
VISHAY
Supplier's product code
SIHFBE30L-GE3
Product ID
U-3045894
Case
TO262
Drain current
2.6A
Drain-source voltage
800V
Gate charge
78nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
3Ω
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
16A
Type of transistor
N-MOSFET
Unit price
No
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