Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252 VISHAY
Product Code: SIHD1K4N60E-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252
Supplier parameters
Product code
SIHD1K4N60E-GE3
Supplier's product code
SIHD1K4N60E-GE3
Product ID
U-3045839
Case
DPAK
Drain current
2.6A
Drain-source voltage
600V
Gate charge
7.5nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.45Ω
Polarisation
unipolar
Power dissipation
63W
Pulsed drain current
5A
Type of transistor
N-MOSFET
Brand
VISHAY
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