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Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 VISHAY

Product Code: SIHD14N60E-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 VISHAY

Specifications

SKU
U-3045837
Brand
Product code
SIHD14N60E-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252

Supplier parameters

Product code
SIHD14N60E-GE3
Supplier's product code
SIHD14N60E-GE3
Product ID
U-3045837
Case
DPAK
Drain current
8A
Drain-source voltage
600V
Gate charge
64nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
309mΩ
Polarisation
unipolar
Power dissipation
147W
Pulsed drain current
32A
Type of transistor
N-MOSFET
Brand
VISHAY
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