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Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 227W VISHAY

Product Code: SIHB23N60E-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 227W VISHAY

Specifications

SKU
U-3045824
Brand
Product code
SIHB23N60E-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 227W

Supplier parameters

Product code
SIHB23N60E-GE3
Case
D2PAK
Drain current
15A
Drain-source voltage
600V
Gate charge
95nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
158mΩ
Polarisation
unipolar
Power dissipation
227W
Pulsed drain current
63A
Type of transistor
N-MOSFET
Supplier's product code
SIHB23N60E-GE3
Product ID
U-3045824
Brand
VISHAY
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