Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 227W VISHAY
Product Code: SIHB22N65E-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 56A; 227W
Supplier parameters
Case
D2PAK
Drain current
14A
Drain-source voltage
650V
Gate charge
110nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.18Ω
Polarisation
unipolar
Power dissipation
227W
Pulsed drain current
56A
Type of transistor
N-MOSFET
Product code
SIHB22N65E-GE3
Brand
VISHAY
Supplier's product code
SIHB22N65E-GE3
Product ID
U-3045823
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