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Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W VISHAY

Product Code: SIHB17N80AE-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W VISHAY

Specifications

SKU
U-3045812
Brand
Product code
SIHB17N80AE-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W

Supplier parameters

Brand
VISHAY
Supplier's product code
SIHB17N80AE-GE3
Product ID
U-3045812
Case
D2PAK
Drain current
10A
Drain-source voltage
800V
Gate charge
62nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.29Ω
Polarisation
unipolar
Power dissipation
179W
Pulsed drain current
32A
Type of transistor
N-MOSFET
Unit price
No
Product code
SIHB17N80AE-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .