Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 100A VISHAY
Product Code: SIE812DF-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 100A
Supplier parameters
Product code
SIE812DF-T1-GE3
Brand
VISHAY
Supplier's product code
SIE812DF-T1-GE3
Product ID
U-3116374
Drain current
60A
Drain-source voltage
40V
Gate charge
170nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
3.4mΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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