Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A VISHAY
Product Code: SIE802DF-T1-E3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Supplier parameters
Product code
SIE802DF-T1-E3
Brand
VISHAY
Supplier's product code
SIE802DF-T1-E3
Product ID
U-3116371
Drain current
60A
Drain-source voltage
30V
Gate charge
160nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.6mΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
100A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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