Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 39.6A; Idm: 80A VISHAY
Product Code: SIDR610DP-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 39.6A; Idm: 80A
Supplier parameters
Product code
SIDR610DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIDR610DP-T1-GE3
Product ID
U-3116357
Drain current
39.6A
Drain-source voltage
200V
Gate charge
38nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
33.4mΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
80A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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