Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A VISHAY
Product Code: SIDR392DP-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 200A
Supplier parameters
Product code
SIDR392DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIDR392DP-T1-GE3
Product ID
U-3116348
Drain current
100A
Drain-source voltage
30V
Gate charge
188nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
930µΩ
Polarisation
unipolar
Power dissipation
125W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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