Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90.5A; Idm: 200A VISHAY
Product Code: SIDR104AEP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90.5A; Idm: 200A
Supplier parameters
Product code
SIDR104AEP-T1-RE3
Brand
VISHAY
Supplier's product code
SIDR104AEP-T1-RE3
Product ID
U-3116342
Drain current
90.5A
Drain-source voltage
100V
Gate charge
70nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
7.2mΩ
Polarisation
unipolar
Power dissipation
120W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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