Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A VISHAY
Product Code: SIA906EDJ-T1-GE3
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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 15A
Supplier parameters
Product code
SIA906EDJ-T1-GE3
Brand
VISHAY
Supplier's product code
SIA906EDJ-T1-GE3
Product ID
U-3116324
Drain current
4.5A
Drain-source voltage
20V
Gate charge
12nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
63mΩ
Polarisation
unipolar
Power dissipation
7.8W
Pulsed drain current
15A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Unit price
No
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