Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.2A; Idm: 8A VISHAY
Product Code: SI4464DY-T1-E3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.2A; Idm: 8A
Supplier parameters
Product code
SI4464DY-T1-E3
Supplier's product code
SI4464DY-T1-E3
Product ID
U-3127378
Case
SO8
Drain current
2.2A
Drain-source voltage
200V
Gate charge
18nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.26Ω
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
8A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
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