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Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD VISHAY

Product Code: SIHD2N80AE-GE3
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Price range

AmountPrice with tax (pcs)
1-4
€2.30€2.30
5-24
€2.07
25-74
€1.83
75-299
€1.65
300+
€1.54
wholesale

Min. qty: 1

Multiplier: 1

Total:

€2.30
2024-11-07 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD VISHAY

Useful information

Specifications

SKU
U-1900562
Brand
Product code
SIHD2N80AE-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD

Useful information

Supplier parameters

Product code
SIHD2N80AE-GE3
#Promotion
aac_202202
Case
DPAK
Drain current
1.8A
Drain-source voltage
800V
Gate charge
10.5nC
Gate-source voltage
±30V
Kind of channel
enhanced
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
2.5Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
3.6A
Type of transistor
N-MOSFET
Unit price
No
Version
ESD
Brand
VISHAY
Supplier's product code
SIHD2N80AE-GE3
Product ID
U-1900562
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
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