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Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 104A; 1135W MICROCHIP (MICROSEMI)

Product Code: APT28M120B2
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Product description

Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 104A; 1135W MICROCHIP (MICROSEMI)

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Specifications

SKU
U-1905801
Product code
APT28M120B2

Supplier product description

Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 104A; 1135W

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Supplier parameters

Product code
APT28M120B2
Brand
MICROCHIP
Supplier's product code
APT28M120B2
Product ID
U-1905801
#Promotion
aac_202202
Case
TO247MAX
Drain current
18A
Drain-source voltage
1.2kV
Gate charge
300nC
Gate-source voltage
±30V
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
530mΩ
Polarisation
unipolar
Power dissipation
1135W
Pulsed drain current
104A
Technology
POWER MOS 8®
Type of transistor
N-MOSFET
Unit price
No
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