Transistor: N-MOSFET; Trench; unipolar; 100V; 6.5A; Idm: 26A; 8.3W NEXPERIA
Product Code: PHT6NQ10T.135
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Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 100V; 6.5A; Idm: 26A; 8.3W
Supplier parameters
Product code
PHT6NQ10T.135
Case
SOT223
Drain current
6.5A
Drain-source voltage
100V
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
90mΩ
Polarisation
unipolar
Power dissipation
8.3W
Pulsed drain current
26A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
PHT6NQ10T.135
Product ID
U-2734278
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